Enhancement of Power Conversion Efficiency CuSbSe2 Based Thin Film Solar Cell

Hafizur Rahman Alve, Saiful Islam, Mrinmoy Dey, Nipu Kumar Das

Abstract


In this research work, we show how to develop and simulate Copper Antimony Selenide (CuSbSe2) based thin film solar cell with dual-heterojunction. Copper Antimony Selenide (CuSbSe2) creates a p-n junction with a window layer and another p-p+ connection with a highly doped back surface Field (BSF) layer, and a dual-heterojunction solar cell structure is produced. Using SCAPS-1D software, which incorporates published experimental physical parameters, the simulation was run. The simulation results show that the PCE of the single heterojunction structure (n-CdS/p-CuSbSe2/Ni) solar cell may reach 27.12 % with Voc=0.738 V, Jsc=43.08 mA/cm2 & FF=85.23 % with the normal level of temperature coefficient (TC). For the dual heterojunction structure (n-CdS/p-CuSbSe2/p+-CGS/Ni) the results exhibit the best Power Conversion Efficiency (PCE) as high as 46.32 % with Voc=1.053 V, Jsc=54.34 mA/cm2 & FF=80.97 % and a good level of temperature coefficient (TC) is found to be (-0.042 %/?C). 

Keywords


Dual-heterojunction; CuSbSe2; BSF; PCE; Thermal stability.

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References


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DOI (PDF): https://doi.org/10.20508/ijsmartgrid.v8i3.352.g362

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